As the AI boom fuels massive data-center buildouts, demand for memory keeps climbing – and with it, the notoriously high power consumption of today's NAND. Samsung's ...
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Samsung touts 96% lower-power NAND design — researchers investigate design based on ferroelectric transistors
Samsung researchers have published a detailed account of an experimental NAND architecture that aims to cut one of the ...
TL;DR: Samsung has developed next-generation NAND flash storage that reduces power consumption by up to 96% compared to current technology. This breakthrough, based on ferroelectric transistors and ...
A technical paper titled “Logic-in-Memory Operation of Ternary NAND/NOR Universal Logic Gates using Double-Gated Feedback Field-Effect Transistors” was published by researchers at Korea University.
As the scale of artificial intelligence (AI) models grows rapidly, securing the performance of memory semiconductors has become a key issue. NAND flash, a type of memory semiconductor with much larger ...
The previous article examined the concept of logic gates. They can be made from discrete and active electronic components, although today logic gates are available within integrated circuits. In this ...
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