Researchers unveil a roadmap for 2D transistor gate stack design, marking a key step toward ultra-efficient chips that could replace silicon technology. For decades, silicon-based CMOS technology has ...
High voltage nanosecond pulse generation using avalanche transistors represents a transformative avenue in the field of pulsed power technology. Exploiting the intrinsic properties of avalanche ...
Sumitomo Electric Device Innovations USA announces next generation GaN high electron mobility transistors for L- and S-band space applications SAN JOSE, Calif., June 21, 2012 (GLOBE NEWSWIRE) — ...
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