EDN

Power transistor capable of multiple GHz range

The EPC8010 power transistor, sold in die form, measures 1.75 mm 2 with 100 VDS. Optimized for high speed switching, the device has a maximum R DS(on) of 160 mΩ and input gate charge in the hundreds ...
Nanowerk

Conductive AFM (C-AFM) measurements on a polished IC surface with multiple transistor contacts

(Application Note) Here is a new Application Note from Nanosurf on conductive AFM (C-AFM) measurements on a polished IC surface with multiple transistor contacts. Chemical-mechanical polishing (CMP) ...

MIT researchers have found a new way to add more transistors to a chip

Traditional CMOS chips are fabricated by applying and then etching repeated layers of different materials, applied to a wafer of ultra-pure silicon. The bottom-most layer, also known as the front end ...
EDN

Single transistor sequences multiple supplies

Many DSP chips, microprocessors, FPGAs, and ASICs require multiple power supplies that must deliver different voltages in a specific start-up sequence. Out-of-sequence voltages can cause excessive ...
Labroots

An Automated Integrated Multiple Assay Platform utilizing CRISPR-based Transistors for CRISPR Quality Control Applications

The discovery of CRISPR technology has revolutionized the fields of transcriptional activation and repression, genome editing, gene-based therapeutics and diagnostics. The applications of this ...
EurekAlert!

Backscatter breakthrough runs near-zero-power IoT communicators at 5G speeds everywhere

The promise of 5G Internet of Things (IoT) networks requires more scalable and robust communication systems -- ones that deliver drastically higher data rates and lower power consumption per device.
Electronic Design

eGaN® Power Transistor Family Capable of Multiple GHz Range

Efficient Power Conversion Corporation extends its family of high-speed, high performance transistors with the EPC8010 power transistor. Sold in die form, the EPC8010 is a mere 1.75 mm2 with 100 VDS.